Computation of Several Banhatti and Reven Invariants of Silicon Carbides

Authors

Abid Mahboob, Department of Mathematics, Division of Science and Technology, University of Education Lahore, PakistanFollow
Muhammad Waheed Rasheed, Department of Mathematics, Division of Science and Technology, University of Education Lahore, PakistanFollow
Jalal Hatem Hussein Bayati, Department of Mathematics, College, and Science for Women, University of Baghdad, Baghdad, IraqFollow
Iqra Hanif, Department of Mathematics, College, and Science for Women, University of Baghdad, Baghdad, IraqFollow

Abstract

Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that correlate well with the chemical characteristics of chemical compounds. In the modern age, topological indices are extremely important in the study of graph theory. Topological indices are critical tools for understanding the core topology of chemical structures while examining chemical substances. In this article, compute the first and second k-Banhatti index, modified first and second k-Banhatti index, first and second k-hyper Banhatti index, first and second hyper Revan indices, first Revan vertex index, and third Revan index for Silicon Carbide SiC4-II [p, q] for all values of p and q

Keywords

Banhatti Indices, Hyper Banhatti Indices, Hyper Revan indices, Silicon carbide SiC4-II [p, q], Topological Indices

Article Type

Supplemental Issue

How to Cite this Article

Mahboob, Abid; Rasheed, Muhammad Waheed; Bayati, Jalal Hatem Hussein; and Hanif, Iqra (2023) "Computation of Several Banhatti and Reven Invariants of Silicon Carbides," Baghdad Science Journal: Vol. 20: Iss. 3, Article 43.
DOI: https://doi.org/10.21123/bsj.2023.8212